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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to KTC8550S. L KTC8050S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING 35 30 5 800 -800 350 150 -55 150 0.6 ) UNIT V 1 P P N C V V mA mA mW DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M 1. EMITTER 2. BASE 3. COLLECTOR K * PC : Package Mounted On 99.5% Alumina (10 8 SOT-23 Marking h FE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification C : 100 200, D : 150 ) TEST CONDITION VCB=15V, IE=0 IC=0.5mA, IE=0 IC=1mA, IB=0 VCE=1V, IC=50mA VCE=1V, IC=350mA IC=500mA, IB=20mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 MIN. 35 30 100 60 TYP. 120 13 MAX. 50 300 0.5 1.2 V V MHz pF UNIT nA V V SYMBOL ICBO V(BR)CBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob 300 2002. 9. 3 Revision No : 0 J D 1/1 |
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